The AIT Ion Beam Deposition (IBD) and Ion Beam Etch (IBE) Systems are custom designed and configured respectively for ion beam deposition and ion beam etching in a variety of system sizes for R&D and production applications.  Additional ion sources can be incorporated into the IBD System to pre-clean the substrate and Ion Assisted Deposition (IAD) for producing hard, high-packing density thin films for a wide variety of optical and electronic device applications.

  • Ion beam deposition on piece-parts, single and multiple wafers ranging in size from 2” to 8”.

  • UHV vacuum deposition chambers configured with dry pumps and high-vacuum cryopump.

  • Option for load-lock chamber with linear motion magnetic transfer arm with susceptor and wafer up/down lifter for accepting/releasing single wafer onto substrate holder.

  • Choice of Gridded 12 cm (50 to 1500eV and 50 to 500 mA) and 16 cm (50 to 1500eV and 75 to 700 mA) RF ion sources for ion beam deposition.

  • Choice of Gridded or Gridless (hollow cathode) ion sources for surface pre-clean and ion assisted deposition  requiring high current low energy ions for improved control of film stress and stoichiometry.

  • Target holder with 3, 4, or 5 targets (2”~8”) arranged on a water-cooled carousel with rotation and indexing and automatic compensation for refractive index process variances in quarter wave stacks.

  • Option for Optical Thickness Monitoring System with real-time in-situ measurement and control of growing film with option for Witness Glass Changer system (reflection mode) and automated Drop Glass System.

  • Option for Ion Beam Etch (IBE) clean and Ion Assisted Deposition (IAD).

  • Option for substrate heating to maximum 600°C.

  • PLC/PID Control/Operation for manual, semi-auto and fully-auto with auto process sequence generation/editing, multi-steps coating and storage of recipes.

  • Typical non-uniformity <+/-0.5% WIW.




Tel: (852) 2719-5440

Fax: (852) 2358-4766

1901 Sunley Center, 9 Wing Yin Street, Tsuen Wan, Hong Kong

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