1.GOLD BUMPS:
For Chip-On-Glass (COG), Tape-Automated-Bonding (TAB), and Chip-On-Flex (COF) applications. Minimum gold bump size of 10 µm x 10 µm with a maximum height of 25 µm. Typical bump hardness 45-60 Hv.

2.INDIUM BUMPS:
For X-ray and Infra-Red (IR) detector applications. Single die bumping for HgCdTe, InSb, GaAs and CdZnTe. Minimum indium bump size of 10 µm diameter with a maximum height of 12 µm. Minimum separation between bumps of 8 µm.

3.COPPER UBM:
Under-Bump-Metal (UBM) for Pb/Sn solder bumps. Minimum copper bump size of 10 µm x 10 µm with a maximum height of 25 µm. Minimum separation between bumps of 10 µm.

4.COPPER POSTS:
Tall copper bumps for improved compliance. Typical size of 75 µm height, 75 µm diameter on a 150 µm pitch.

5.LEAD/TIN SOLDER BUMPS:
For Chip-On-Board (COB), Flip-Chip-In-Package (FCIP) and Chip-On-Flex (COF) applications. Minimum post-reflow lead/tin solder bump size of 15 µm diameter. Minimum separation between bumps of 20 µm.

a) EUTECTIC Lead-Tin (37/63)
Melting point of 187 ºC

b) HIGH-LEAD (95/5 and 90/10)
Melting point of 310 ºC

6.ELECTROLESS NICKEL BUMPS:
As a low-cost UBM for screen-printing of solder bumps. Average height of 5-8 µm with approximately 500 Å of Au.

Electroless Nickel Bumps

7.LEAD-FREE PURE TIN-BUMPS:
Melting point of 232 ºC

8.LEAD-FREE TIN-BISMUTH BUMPS:
Composition of 80/20 Sn/Bi with a melting point of 185 ºC.

10.LEAD-FREE TIN-SILVER BUMPS:
Composition of either eutectic with a melting point of 221 ºC 96.5/3.5 or 90/10 with a melting point of 310 ºC.

11.LEAD-FREE TIN-SILVER-COPPER BUMPS:
Composition of 95.7/3.5/0.8 with a melting point of approximately 217 ºC.

Fabrication Processes
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a) Gold bumping
b) Solder bumping
c) I/O re-distribution
d) Electroless Ni bumping